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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8200B/D NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matching networks, the TPV8200B features high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit. * To be used class AB for TV band IV and V. * Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW) Gain = 8 dB Min * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TPV8200B Motorola Preferred Device 190 W, 470 - 860 MHz RF POWER TRANSISTOR NPN SILICON CASE 375A-01, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Quiescent Current (without RF drive) Storage Temperature Range Symbol VCEO VCBO VEBO IC PD ICQ Tstg Characteristic Thermal Resistance, Junction to Case (1) Symbol RJC Symbol Min Typ Value 30 65 4 20 250 1.43 2 x 500 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C mAdc C THERMAL CHARACTERISTICS Max 0.7 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 20 mAdc, IC = 0) Collector-Emitter Leakage Current (VCE = 28 Vdc, RBE = 75 ) NOTE: 1. Thermal resistance is determined under specific RF condition. Teflon is a registered trademark of du Pont de Nemours & Co., Inc. Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO V(BR)CBO V(BR)EBO ICER 30 65 4 -- 35 80 5 -- -- -- -- 15 Vdc Vdc Vdc mAdc (continued) REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 TPV8200B 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (ICE = 2 Adc, VCE = 10 Vdc) hFE 30 75 120 -- DYNAMIC CHARACTERISTICS Output Capacitance (each side) (2) (VCB = 28 Vdc, IE = 0, f = 1 MHz) Cob -- 76 -- pF FUNCTIONAL TESTS IN CW Common-Emitter Amplifier Power Gain (VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz) Collector Efficiency (VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz) Output Power @ 1 dB Compression (Pref = 40 W) (VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz) Input overdrive: no degradation (VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz) Output Mismatch Stress: (VCE = 28 Vdc, Pout = 120 W, ICQ = 2 x 75 mA, f = 860 MHz, Load VSWR = 3:1, all phase angles at frequency of test) Gpe Pout Pin 8 45 150 30 9.5 53 165 -- -- -- -- -- dB % W W No Degradation in Output Power Before or After Test FUNCTIONAL TESTS IN VIDEO (Standard Black Level) Peak Output Power @ 1 dB Compression (VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz) Pout 190 210 -- W NOTE: 2. Value of "Cob" is that of die only. It is not measurable in TPV8200B because of internal matching network. VCC T1 R4 C8 R3 C10 C6 D.U.T. R2 T2 P1 R5 C11 C9 C7 C3 C5 INPUT C1 R2 C6 R1 C3 C7 L1 C2 C4 L2 OUTPUT C1 -- Chip Capacitor 47 pF ATC 100A C2 -- Chip Capacitor 12 pF ATC 100B C2 -- + Trimmer Capacitor 0.5- 4 pF C3 -- Chip Capacitor 8.2 pF ATC 100B C4 -- Chip Capacitor 12 pF ATC 100B C5 -- Chip Capacitor 100 pF ATC 100A C6 -- Chip Capacitor 2 x 1000 pF Vitramon C7 -- Chip Capacitor 2 x 0.1 F Vitramon C8 -- Capacitor 220 F/16 V C9 -- Capacitor 100 F/40 V C10 -- Chip Capacitor 100 pF Vitramon C11 -- Chip Capacitor 15 nF Vitramon L1 -- Coaxial 25 / length = 41 mm L2 -- Coaxial 25 / length = 41 mm R1 -- Chip Resistor 47 R2 -- 2 x 1 (0.5 ) R3 -- Resistor 0.8 R4 -- Resistor 47 R5 -- Resistor 1.2 k P1 -- Trimmer Resistor 5 k T1 -- Transistor BD 135 T2 -- Transistor BD 135 PC Board: 1/50 Glass Teflon(R) r = 2.55 Figure 1. 860 MHz Test Circuit TPV8200B 2 MOTOROLA RF DEVICE DATA Figure 2. Components View CAUTION The TPV8200B is a high power transistor and thermal adaptation is very important for good RF performance (see mechanical drawing for mounting recommendations). Maximum Ratings are given to avoid destruction of the transistor; another limitation is MMMTBF and the user must first determine the minimum wanted life-time in order to choose the right way of use for the device (see MMMTBF curves), especially in case of CW application. MOTOROLA RF DEVICE DATA TPV8200B 3 OUTPUT INPUT AA AA AA AA TYPICAL CHARACTERISTICS 230 Po, OUTPUT POWER (WATTS) 13 210 G pe , POWER GAIN (dB) 12 190 11 170 VCE = 28 V ICQ = 2 x 75 mA 10 VCE = 28 V ICQ = 2 x 75 mA Pout = 150 W 665 f, FREQUENCY (MHz) 860 150 9 130 470 665 f, FREQUENCY (MHz) 860 8 470 Figure 3. Output Power @ 1 dB Comp. versus Frequency Figure 4. Power Gain versus Frequency 60 150 , EFFICIENCY (%) 50 40 30 20 10 0 0 10 INPUT POWER (WATTS) 20 0 50 100 OUTPUT POWER (WATTS) 150 VCE = 28 V ICQ = 2 x 75 mA f = 860 MHz Po, OUTPUT POWER (WATTS) 100 50 VCE = 28 V ICQ = 2 x 75 mA f = 860 MHz 0 Figure 5. Output Power versus Input Power Figure 6. Collector Efficiency versus Output Power -20 -5 dB INTERMODULATION (dB) IMD -30 -17 dB VCE = 28 V ICQ = 2 x 75 mA f = 860 MHz -20 VCE = 28 V ICQ = 2 x 75 mA f = 860 MHz -30 INTERMODULATION (dB) -40 -40 IMD 0 dB -7 dB -50 50 100 150 Po, OUTPUT POWER (WATTS) 200 250 -50 25 50 75 100 Po, OUTPUT POWER (WATTS) Figure 7. Intermodulation versus Peak Power (Side Band) Figure 8. Intermodulation versus Peak Power (Dual Sound) TPV8200B 4 MOTOROLA RF DEVICE DATA TYPICAL VIDEO CHARACTERISTICS @ f = 860 MHz VCE = 28 V VCE = 28 V ICQ = 2 x 75 mA f = 860 MHz (Channel 69) Black Level 100 0 40 30 200 Po, OUTPUT POWER (WATTS) VCE = 28 V ICQ = 2 x 75 mA f = 860 MHz 27% (Channel 69) 0% Black Level (Input Video Waveform) (Input Video Waveform) SYNC. PULSE (%) 5 10 15 20 25 150 25 100 20 50 15 0 50 100 150 200 Pin, INPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) Figure 9. Peak Output Power versus Peak Input Power Figure 10. Sync. Pulse versus Peak Output Power TEST CONDITIONS: 10% Rest Carrier Channel 69 VCE = 28 V ICQ = 2 x 75 mA (Input Video Waveform) (Input Video Waveform) % 100 90 80 70 60 50 40 30 20 10 0 Pout = 100 W Pout = 150 W % 100 90 80 70 60 50 40 30 20 10 0 Pout = 210 W % 100 90 80 70 60 50 40 30 20 10 0 Pout = 210 W APL 10-90 (%) Figure 11. Gain versus Output Power MOTOROLA RF DEVICE DATA TPV8200B 5 f MHz Zin f = 470 MHz 860 470 567 665 762 860 470 ZOL* f = 860 MHz Zo = 10 Zin Ohms 0.80 + j2.11 0.85 + j3.15 1.56 + j4.20 2.64 + j3.36 2.72 + j2.24 ZOL* Ohms 7.93 + j0.94 5.94 + j0.30 4.55 - j0.02 3.70 - j0.52 2.91 - j0.92 ZOL* = Conjugate of optimum load impedance into which ZOL* = the device operates at a given output power, ZOL* = voltage, current, and frequency. Base-base & collector-collector Impedances with Circuit Tuned for Maximum Gain @ VCE = 28 V / ICQ = 2 x 75 mA / Pout = 150 W Figure 12. Series Equivalent Input/Output Impedances RELIABILITY DEPENDENCE ON THERMAL CONSIDERATIONS MMMTBF: Metal Migration Mean Time Before Failure. 0.80 Rth , JUNCTION - CASE (C/W) 1011 0.75 1010 MMMTBF (HOURS. A2 ) 109 108 0.70 0.65 0.60 107 106 50 0.55 50 100 150 200 250 100 150 200 250 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) Figure 13. Thermal Resistance versus Junction Temperature TYPICAL CONDITIONS (120 W CW): Pout = 120 W Pin = 15 W VCE = 28 V = 45% ICQ = 9.5 A RTH = 0.7C/W Tmax = 70C Figure 14. MMMTBF versus Junction Temperature TYPICAL CONDITIONS (210 W VIDEO): Pout = 70 W Pin = 7.8 W VCE = 28 V = 38% ICQ = 6.6 A RTH = 0.7C/W Tmax = 70C Pdiss = 161 W Tjct = 183C J = (5.64) 104 A/cm2 MTBF = 26 YEARS Pdiss = 123 W Tjct = 156C J = (3.92) 104 A/cm2 MTBF = 252 YEARS TPV8200B 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q G L 1 2 2 PL 0.25 (0.010) M TB M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.205 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.082 0.097 0.580 0.620 0.435 BSC 0.845 0.875 0.118 0.130 0.390 0.410 COLLECTOR COLLECTOR BASE BASE EMITTER MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.21 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.08 2.46 14.73 15.75 11.05 BSC 21.46 22.23 3.00 3.30 9.91 10.41 K R 5 3 4 -B- D E H N F DIM A B C D E F G H K L N Q R -T- A C SEATING PLANE CASE 375A-01 ISSUE O STYLE 1: PIN 1. 2. 3. 4. 5. MOTOROLA RF DEVICE DATA TPV8200B 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. TPV8200B 8 *TPV8200B/D* TPV8200B/D MOTOROLA RF DEVICE DATA |
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